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2SK1668
Silicon N Channel MOS FET
Application
TO-220FM
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC convertor
12 2 1
3 1. Gate 2. Drain 3. Source 3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 7 28 7 30 150 -55 to +150 Unit V V A A A W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
2SK1668
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5
-------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
30 -- -- V
--------------------------------------------------------------------------------------
-- -- 2.0 -- -- -- -- 0.4 10 250 3.0 0.55 A A V
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
3.0 5.0 -- S
--------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 690 265 45 13 55 65 37 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s
---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
-- 180 -- ns
-------------------------------------------------------------------------------------- See characteristic curves of 2SK1667.
2SK1668
Power vs. Temperature Derating
40
Maximum Safe Operation Area
50 30
10
10 s
Pch (W)
0
30
10 Drain Current I D (A)
D C O
PW
s
1
= 10 m s
m
s
Channel Dissipation
3
pe
20
ra
tio
(1
n
1.0 Operation in this area is limited by R DS (on)
(T
sh
c
ot
)
=
25
C
)
10
0.3
Ta = 25C 0.1
0 50 100 Case Temperature 150 Tc (C) 200
0.05 1
3
10
30
100
300
1000
Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t) 3 Tc = 25C
1.0
D=1 0.5
0.3
0.2 0.1 ch - c(t) = s(t) . ch - c ch - c = 4.17C / W, Tc = 25C PW D= T P DM T 1m 10 m Pulse Width PW (S) 100 m PW
0.1
0.05 0.02
ot P ulse
0.03 0.01 0.01 10
1 sh
100
1
10

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